X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayersHOLY, V; DARHUBER, A. A; STANGL, J et al.Semiconductor science and technology. 1998, Vol 13, Num 6, pp 590-598, issn 0268-1242Article

Object nets for the design and verification of distributed and embedded applicationsNÜTZEL, J; DÄNE, B; FENGLER, W et al.Lecture notes in computer science. 1998, pp 953-962, issn 0302-9743, isbn 3-540-64359-1Conference Paper

Phosphorous doping in low temperature silicon molecular beam epitaxyFRIESS, E; NÜTZEL, J; ABSTREITER, G et al.Applied physics letters. 1992, Vol 60, Num 18, pp 2237-2239, issn 0003-6951Article

Modelling and distributed simulation of production of single piece and small-lot series using Fuzzy Coloured Petri NetsBEN ACHOUR, K; FENGLER, W; DANE, B et al.Information processing and management of uncertainty in knowledge-based systems. International conferenceTraitement d'information et gestion d'incertitudes dans les systèmes à base de connaissances. Conférence internationale. 1998, pp 1602-1610, isbn 2-84254-013-1, 2VolConference Paper

Segregation of n-dopants on SiGe surfacesNÜTZEL, J. F; HOLZMANN, M; SCHITTENHELM, P et al.Applied surface science. 1996, Vol 102, pp 98-101, issn 0169-4332Conference Paper

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wellsKRUCK, P; WEICHSELBAUM, A; HELM, M et al.Superlattices and microstructures. 1998, Vol 23, Num 1, pp 61-66, issn 0749-6036Article

Boron-doped Si/Ge superlattices and heterostructuresNÜTZEL, J. F; MEIER, F; FRIESS, E et al.Thin solid films. 1992, Vol 222, Num 1-2, pp 150-153, issn 0040-6090Conference Paper

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBEJAUMANN, M; STIMMER, J; SCHITTENHELM, P et al.Applied surface science. 1996, Vol 102, pp 327-330, issn 0169-4332Conference Paper